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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION With TO-126 package High breakdown voltage APPLICATIONS For use in line-operated equipment such as audio output amplifiers; low-current ,high-voltage converters; and AC line relays PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base 2N5655 2N5656 2N5657 Absolute maximum ratings(Ta=25ae ) SYMBOL PARAMETER CONDITIONS 2N5655 2N5656 VCBO Collector-base voltage VCEO IN Collector-emitter voltage HAN C GE S 2N5657 2N5655 2N5656 2N5657 Open emitter EMIC OND TOR UC VALUE 275 325 375 250 300 350 UNIT V Open base V VEBO IC ICM IB PD Tj Tstg Emitter-base voltage Collector current Collector current-Peak Base current Total power dissipation Junction temperature Storage temperature Open collector 6 0.5 1.0 0.25 V A A A W ae ae TC=25ae 20 150 -65~150 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 6.25 UNIT ae /W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER 2N5655 VCEO(SUS) Collector-emitter sustaining voltage 2N5656 2N5657 VCEsat-1 VCEsat-2 VCEsat-3 VBE Collector-emitter saturation voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage 2N5655 ICEO Collector cut-off current 2N5656 2N5657 2N5655 2N5656 2N5657 IC=100mA ;IB=10mA IC=250mA ;IB=25mA IC=500mA ;IB=100mA IC=100mA ; VCE=10V VCE=150V; IB=0 VCE=200V; IB=0 VCE=250V; IB=0 VCB=275V; IE=0 VCB=325V; IE=0 2N5655 2N5656 2N5657 SYMBOL CONDITIONS MIN 250 TYP. MAX UNIT IC=0.1A; IB=0;L=50mH 300 350 1.0 2.5 10 1.0 V V V V V 0.1 mA ICBO Collector cut-off current ICEX IEBO hFE-1 hFE-2 hFE-3 hFE-4 fT COB Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain DC current gain Transition frequency Output capacitance HAN INC SEM GE VEB=6V; IC=0 VCB=375V; IE=0 OND IC TOR UC 10 |I 0.1 1.0 10 A VCE= Rated VCEO; VBE(off)=1.5V TC=100ae mA |I A IC=50mA ; VCE=10V IC=100mA ; VCE=10V IC=250mA ; VCE=10V IC=500mA ; VCE=10V IC=50mA ; VCE=10V;f=10MHz f=100kHz ; VCB=10V;IE=0 25 30 15 5 10 25 MHz pF 250 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N5655 2N5656 2N5657 SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions 3 |
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